Microwave Properties of 2D CMOS Compatible Co‐Planar Waveguides Made from Phosphorus Dopant Monolayers in Silicon

Abstract Low‐dimensional microwave interconnects have important applications for nanoscale electronics, from complementary metal–oxide‐semiconductor (CMOS) to silicon quantum technologies. Graphene is naturally and has already demonstrated attractive electronic properties, however its application electronics limited by available fabrication techniques CMOS incompatibility. Here, the characteristics of transmission lines made doped with phosphorus are investigated using phosphine monolayer doping. S‐parameter measurements performed between 4–26 GHz room temperature down 4.5 K. At 20 GHz, measured line consist an attenuation constant 40 dB mm −1 a characteristic impedance 600 Ω. The results indicate that Si:P monolayers viable candidate they a.c. properties similar graphene, additional benefit extremely precise, reliable, stable, inherently compatible fabrication.